Gaming PC

1Tb TLC with 3.2 GT/s IO Speed

Kioxia and Western Digital officially 8th Generation BiCS 3D NAND memory with 218 active layers. The new storage device offers 1Tb capacity in 3D TLC mode and has a data transfer rate of 3200 MT/s. This combination allows SSD manufacturers to build high-performance, high-capacity drives. To achieve such extreme interface speeds, both companies adopted an architecture similar to his YMTC’s Xtacking.

Jointly developed by Kioxia and Western Digital, the 218-layer BiCS 3D NAND device supports Triple Level Cell (TLC) and Quad Level Cell (QLC) configurations to maximize storage density and expand addressable applications . The companies said the new devices will feature a new “lateral shrinking technique that increases the bit density by more than 50”, but did not provide further details. Considering that flash memory ICs have increased the number of active layers by 34%, the claim of a 50% increase in bit density seems to suggest that the developer also reduced the lateral size of his NAND cells to allow more space per layer. Indicates that many cells will fit.

The 218-layer 3D NAND device, on the other hand, features a quad-plane architecture, which increases the level of parallelism in programming and read times, boosting performance. In addition, the 218-layer 3D TLC device also has an input/output interface of 3200 MT/s (which can deliver a peak read/write speed of 400 MB/s), which is the highest I/O speed ever announced. . High data transfer speed is convenient for high-end client and enterprise SSD with PCIe 5.0 interface.

Kioxia and Western Digital Fab 7, Yokkaichi Plant, Japan

8 key innovationsth Generation BiCS 3D NAND memory is a brand-new CBA (CMOS direct Bonded to Array) architecture, using optimal process technology to fabricate 3D NAND cell array wafers and I/O CMOS wafers separately and bond them together. products that provide higher final bit densities and faster NAND I/O speeds. Meanwhile, Kioxia and Western Digital should reveal details of the CBA architecture and whether the I/O CMOS wafers will feature other of his NAND peripheral circuits such as page buffers, sense amplifiers and charge pumps. .

Manufacturing the memory cells and peripheral circuitry separately solves some problems because manufacturers can manufacture using the most efficient process technology in the cleanroom section. This provides additional benefits as the industry adopts methods such as string stacking.

Kioxia said it has started shipping eight samplesth Generation BiCS 3D NAND memory devices of choice for customers. Still, there is no word on when the company will begin mass production of its next-generation flash memory. It’s not uncommon for companies to announce new types of his 3D NAND quarters before going into mass Gen BICS will hit the market in 2024.

Through a unique engineering partnership, we successfully launched the 8th generation BiCS flash with the industry’s highest 1-bit density.Masaki Momotomi, Chief Technology Officer of KIOXIA Corporation, said:We are pleased to announce that KIOXIA has begun shipping samples to select customers. By applying CBA technology and scaling innovations, we have evolved a portfolio of 3D flash memory technologies that can be used in a variety of data-centric applications such as smartphones, IoT devices, and data centers.

Related Articles

Leave a Reply

Your email address will not be published. Required fields are marked *

Back to top button