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Samsung 16Gb DDR5 Enters Mass Production on 12nm Node

Samsung Reaffirms DRAM Leadership by Starting Mass Production (opens in new tab) 16 Gigabit (Gb) DDR5 DRAM at 12nm. The South Korean electronics giant claims that memory ICs born from this new process will consume about a quarter of the power and improve wafer productivity by as much as a fifth compared to the previous generation. . Additionally, these cutting-edge memory chips boast pin speeds of up to 7.2 Gbps.

Jooyoung Lee, Executive Vice President of DRAM Products & Technologies at Samsung Electronics, said of the manufacturing milestone, “By using differentiated process technology, Samsung’s industry-leading 12nm-class DDR5 DRAM It delivers outstanding performance and power efficiency.” However, PC users will have to wait for a trickle down as the first use of these his 12nm DDR5 ICs will be in applications such as data centers, artificial intelligence and next generation computing.

(Image source: Samsung)

Samsung says the development of 12nm-class DRAM was made possible by “the use of new high-K materials.” To elaborate further, the transistor gate materials used in these ICs have high capacitance, making it easy to accurately distinguish between their states. Additionally, Samsung’s efforts to reduce operating voltage and noise have also contributed to this optimized solution.

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