Samsung announced today that it has begun mass production of its supposedly 236-layer 3D NAND memory. This is what the company is branding as its 8th generation V-NAND. The new IC features a transfer rate of 2400 MTps and when paired with an advanced controller can deliver client-grade his SSDs with transfer rates in excess of 12 GBps.
The new 8th Gen V-NAND device will feature 1Tb capacity (128GB), which Samsung calls the industry’s highest bit density, but has not disclosed the size of the IC or the actual density. The IC also features a data transfer rate of 2400 MTps. This is essential for the best he SSD with a PCIe 5.0 x4 interface offering a staggering 12.4 GBps (or more!) when paired with the right controller.
Samsung claims the new generation of 3D NAND memory will deliver 20% higher productivity per wafer compared to existing flash ICs of the same capacity. This reduces the company’s costs (for the same yield) and potentially makes SSDs cheaper. .
The company, on the other hand, hasn’t said anything about the device’s architecture, but based on the images provided, we’re assuming we’re talking about a dual-plane 3D NAND IC.
“As market demand for higher density and higher capacity storage drives an increase in the number of V-NAND layers, Samsung employs advanced 3D scaling technology to reduce surface area and height, which typically occurs in scaling down. “Our 8th-generation V-NAND is designed to meet the rapidly expanding market demand,” said Sung Hoi Hur, executive vice president of flash products and technology at Samsung Electronics. , and help us deliver more differentiated products and solutions that are just the foundation for future storage innovations.”
Samsung has not announced an actual product based on its 8th generation V-NAND memory, but we can speculate that the first devices will serve client applications.
