Samsung Preps Next-Gen V-NAND Memory: Higher Capacity and Performance
Samsung is preparing to start mass production of its 8th generation V-NAND memory. This memory features over 200 layers to bring higher performance and bit density to solid state storage devices.
Samsung was years ahead of its competitors with 24-layer V-NAND flash memory in 2013, but it took a long time for others to catch up. Since then, however, it’s gotten harder to build hundreds of layers of NAND, so the South Korean giant has been a little more cautious. defeated. But the V-NAND developer isn’t standing still, and the 236-layer he’s preparing to start mass-producing 3D NAND memory (called V-NAND, of course), the report reports. doing. business korea (opens in new tab).
Samsung produced the first samples of over 200 layers of V-NAND memory in mid-2021, so it should have enough technical experience to start mass-producing such devices. Unfortunately, at the moment it’s difficult to judge the capacity of Samsung’s upcoming 8th Gen V-NAND chips. Still, I’m sure one of the company’s goals for the next generation of his NAND memory will be faster interface speeds and other performance characteristics to bring the next generation of best his SSD to life.
Samsung Needs NAND Devices With High-Speed Interfaces To Build A Competitive Solid State Storage Solution For Upcoming Desktops And Laptops With PCIe Gen5 Interfaces And Smartphones That Support UFS 3.1 And 4.0 Interfaces I’m doing it. Samsung’s current V7-NAND already has interface speeds of up to 2.0 GT/s, but V8-NAND is expected to bring interface speeds even higher.
Another thing we can expect from Samsung’s 8th Gen V-NAND is increased program block size and reduced read latency. This optimizes the performance of high capacity 3D NAND devices. Unfortunately, the exact characteristics are unknown.
Increasing the number of NAND layers is sometimes thought of as an easy way to scale flash memory, but it is not. Thinner NAND layers (and thus smaller NAND cells) require the use of new materials to reliably store charge. Furthermore, etching hundreds of layers is difficult (and may not be economically feasible), and 3D NAND manufacturers have adopted techniques such as string stacking to fabricate 3D NAND with hundreds of layers. should be constructed. Samsung has yet to adopt string stacking in its 176-layer V7-NAND, but it remains to be seen if this technology will be used in his 236-layer V8-NAND.