Gaming PC

Smasung First to GAA Node, Beating Intel, TSMC

When Samsung announced earlier this year that it had begun mass-producing chips using its 3GAE (3nm-class, gate-all-around Early) process technology, it became clear what components it had created at its leading-edge node. It was not. Apparently, Samsung is using his 3GAE to manufacture Application Specific Integrated Circuits (ASICs) for cryptocurrency mining.

The Samsung 3GAE manufacturing technology is the industry’s first process that relies on gate-all-around (GAA) transistors, which Samsung calls MBCFETs (Multi-Bridge Channel Field Effect Transistors). The GAA transistor architecture reduces leakage current as the gate is surrounded by the channel on all four sides of him. You can also change the performance and power consumption of the transistor by adjusting the channel thickness of the channel. GAAFETs are especially beneficial for high performance and mobile applications. So companies like Intel and TSMC are working hard to have his GAAFET in 2024-2025.

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