Micron this week built a state-of-the-art memory production facility near Boise, Idaho.Company to invest $15 billion in new fab as part of ambitious investment plan $40 billion US-based manufacturing capacity and spending by the end of the decade $150 billion in new fabs by 2030 Globally.
Micron’s upcoming state-of-the-art fab will produce DRAM and will be a fairly large manufacturing facility.When the fab is fully equipped with tools at buildout, its cleanroom space reaches 600,000 feet2 (55,700 meters2), which is about twice as large as the cleanroom space at GlobalFoundries’ Fab 8 and rivals the cleanroom space at the South Korean giant fabs operated by Micron rivals Samsung and SK Hynix. Basically, Micron operates one of the largest semiconductor manufacturing facilities in the United States.
The new fab will be located adjacent to Micron’s R&D center and corporate headquarters near Boise, Idaho, bringing together scientists, process technology developers and manufacturing engineers in one location for time-to-production and time-to-production. promised to be shortened. – Advanced DRAM market.
Sanjay Melotra, Micron’s president and CEO, said:
Micron is currently prepping the new fab site and plans to begin construction in early 2023, with cleanroom space gradually coming online from 2025. The facility will be equipped with state-of-the-art deep ultraviolet (DUV) and extreme ultraviolet (EUV). Using lithography tools, he creates memory using one of Micron’s advanced EUV-ready production nodes. The company plans to start fabs of his DRAM in a new facility in 2025 and then ramp up production to fu.ll capacity for the next year.
At this point, it’s hard to guess which manufacturing process the new fab will employ. Considering that Micron plans to start producing DRAM using that technology, First EUV-compatible manufacturing technology (1γ) Sometime in mid-2023 to early 2024, a fab near Boise, Idaho, will likely adopt the company’s second EUV-ready process (1δ). However, this is an educated guess at this point (based on the habitual introduction of new DRAM nodes about every 18 months).
Micron aims to make 40% of the world’s DRAM production in the US in the 2030s. So, in addition to his Micron’s new fab near Boise, Idaho, the company plans to build yet another DRAM facility in the US. The company is currently in the final stages of the selection process for another US site.
Micron will invest $15 billion in a new manufacturing facility near Boise, Idaho. The company will also receive incentives from local and state officials and federal support made possible by the CHIPS and Science Act signed last month.
“The investments made possible by the upcoming grants and credits provided by the Chips and Science Act will strengthen the resilience of Micron’s supply chain and establish new strategic capabilities for the United States,” said a Micron executive. okay,” he said.
It’s worth noting that Micron isn’t the only DRAM maker to start building new memory fabs at a time when demand for both 3D NAND and DRAM is dropping. Last week, SK Hynix began expanding his M15 site with its new M15X building in preparation for his increased DRAM demand starting in 2025.
sauce: micron
