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Solidigm Introduces Industry-First PLC NAND for Higher Storage Densities

Solidigm, the NAND research and manufacturing division sold by Intel to Kioxia, will attend the Flash Memory Summit 2022, Showcasing a completed working SSD prototype featuring the company’s latest NAND technology: Penta Level Cell (PLC). PLC builds on NAND density by adding the ability to store up to 5 bits of data in a single cell (up from QLC with 4 bits per cell), increasing the amount of space available in each NAND Flash chip. Increase quantity.

This new technology therefore paves the way for even cheaper $/GB ratios in PLC-based SSDs than is currently possible with Quad Level Cell (QLC) technology (most (enterprise, data center, and other critical environments). Despite the alarming pace of growth in the amount of data that humans generate (By 2025, 463 exabytes of data are projected to be created per day), storage technology must also evolve to accommodate this avalanche. With increasing investment in supercomputing and the dawn of 5G and AI, both with their own deep data storage requirements, Solidigm sees his PLCs as a cost-effective way to scale.

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PLCs work by adding additional voltage states that represent bits of information within a cell. Whereas the SLC had to handle only two voltage states (whether the bit was written or not), the MLC doubled that number to four voltage states (so each cell has a 0 and a 1 can include any combination of both). PLC NAND technology requires 32 different voltage states to distinguish between all possible combinations of 1s and 0s that a cell can hold. This puts additional strain on the cell and controller level, increasing the chances of incorrectly written voltage states and corrupted data. Therefore, stronger error correction algorithms should be implemented at the controller level.

This table summarizes the bits available in various NAND cells. Note that the number of voltage states must be doubled for each additional bit. (Image credit: Wikipedia)

Each additional bit per cell requires doubling the voltage state, which has its own impact on the life expectancy of the cell, and requires much more to cope with the ever-smaller difference between states. Requires fine-tuned read and write capabilities. As the bit storage capacity increases, the life expectancy of NAND cells decreases, which is commonly believed to make QLC SSDs less reliable (cells “die” sooner) than those with fewer bits. It’s part of the reason I’m here.

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